Analytical model for and scale-down effect of a floating body voltage in SOI MOSFETs

被引：3

作者：

Yi, JH ^{[1
]}

Park, YJ ^{[1
]}

Min, HS ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2002年 / 40卷 / 04期

关键词：

SOI; floating body voltage; transient body voltage; scale-down effect; charge sharing model;

D O I：

10.3938/jkps.40.668

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Models for charge sharing and the body current of partially depleted (PD) silicon-on-insulator (SOI) NMOSFETs are proposed in order to extract the floating body voltage of devices under various operating conditions and for various device structure parameters. Also, an SOI simulator, incorporating the proposed models, is developed to predict the scaling properties of the floating body voltage, especially in the low voltage region.

引用

页码：668 / 671

页数：4

共 8 条

[1] Arora N., 1993, MOSFET MODELS VLSI C
[2] COLINGE JP, 1991, SILICON INSULATOR
[3] Cristoloveanu S., 1995, ELECT CHARACTERIZATI
[4] Ernst T., 2000, 2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125), P64, DOI 10.1109/SOI.2000.892771
[5] Low-voltage transient bipolar effect induced by dynamic floating-body charging in scaled PD/SOI MOSFET's
Pelella, MM
Fossum, JG
Suh, DW
Krishnan, S
Jenkins, KA
Hargrove, MJ
[J]. IEEE ELECTRON DEVICE LETTERS, 1996, 17 (05) : 196 - 198
[6] A ROOM-TEMPERATURE 0.1 MU-M CMOS ON SOI
SHAHIDI, GG
ANDERSON, CA
CHAPPELL, BA
CHAPPELL, TI
COMFORT, JH
DAVARI, B
DENNARD, RH
FRANCH, RL
MCFARLAND, PA
NEELY, JS
NING, TH
POLCARI, MR
WARNOCK, JD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) : 2405 - 2412
[7] Design methodology for minimizing hysteretic VT-variation in partially-depleted SOI CMOS
Wei, A
Antoniadis, DA
[J]. INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 411 - 414
[8] A PHYSICAL MODEL OF FLOATING BODY THIN-FILM SILICON-ON-INSULATOR NMOSFET WITH PARASITIC BIPOLAR-TRANSISTOR
YU, HK
LYU, JS
KANG, SW
KIM, CK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (05) : 726 - 733

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