Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates

被引：29
作者：
Dou, Wei [1 ,2 ]
Zhu, Liqiang [1 ,2 ]
Jiang, Jie [1 ,2 ]
Wan, Qing [1 ,2 ]
机构：
[1] Hunan Univ, Minist Educ, Key Lab Micronano Optoelect Devices, Changsha 410082, Hunan, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 02期
基金：
中国国家自然科学基金;
关键词：
Chitosan; dual-gate thin-film transistors (TFTs); paper electronics; threshold voltage modulation; TRANSISTORS;
D O I：
10.1109/LED.2012.2231661
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-voltage flexible dual-gate indium-tin-oxide-based thin-film transistors (TFTs) are self-assembled on SiO2-covered paper substrates by one shadow mask diffraction method. Solution-processed chitosan gate dielectric films have a large gate specific capacitance (5.8 mu F/cm(2)) due to the electric-double-layer effect. The subthreshold swing, drain-current on/off ratio, and field-effect mobility are estimated to be 80 mV/dec, 4 x 10(6), and 9.3 cm(2)/V . s, respectively. Low-voltage operation mechanism and threshold voltage modulation of such dual-gate paper TFTs are investigated.
引用
收藏
页码：259 / 261
页数：3
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