On the origin of emission and thermal quenching of SRSO:Er3+ films grown by ECR-PECVD

被引：19

作者：

Podhorodecki, Artur ^{[1
]}

Zatryb, Grzegorz ^{[1
]}

Golacki, Lukasz W. ^{[1
]}

Misiewicz, Jan ^{[1
]}

Wojcik, Jacek ^{[2
,3
]}

Mascher, Peter ^{[2
,3
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada

[3] McMaster Univ, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada

来源：

NANOSCALE RESEARCH LETTERS | 2013年 / 8卷

基金：

加拿大自然科学与工程研究理事会;

关键词：

Silicon; Nanocrystals; Erbium; Emission; Quenching; Temperature; Photoluminescence; ENERGY-TRANSFER; SI NANOCLUSTERS; ER3+ IONS; SILICON NANOCRYSTALS; EXCITATION; LUMINESCENCE; MECHANISMS; DEPENDENCE; DYNAMICS; LIFETIME;

D O I：

10.1186/1556-276X-8-98

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon nanocrystals embedded in a silicon-rich silicon oxide matrix doped with Er3+ ions have been fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been investigated. Temperature quenching of the photoluminescence originating from the silicon nanocrystals and the erbium ions has been observed. Activation energies of the thermally activated quenching process were estimated for different excitation wavelengths. The temperature quenching mechanism of the emission is discussed. Also, the origin of visible emission and kinetic properties of Er-related emission have been discussed in details.

引用

页码：1 / 12

页数：12

共 56 条

[1]

Barfels T., 2001, THESIS ROSTOCK U

[2] Size-dependent electron-hole exchange interaction in Si nanocrystals [J].

Brongersma, ML ;

Kik, PG ;

Polman, A ;

Min, KS ;

Atwater, HA .

APPLIED PHYSICS LETTERS, 2000, 76 (03) :351-353

[3] S-shaped temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells [J].

Cho, YH ;

Gainer, GH ;

Fischer, AJ ;

Song, JJ ;

Keller, S ;

Mishra, UK ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1998, 73 (10) :1370-1372

[4] Geometrical effects in the energy transfer mechanism for silicon nanocrystals and Er3+ [J].

Choy, K. ;

Lenz, F. ;

Liang, X. X. ;

Marsiglio, F. ;

Meldrum, A. .

APPLIED PHYSICS LETTERS, 2008, 93 (26)

[5] X-ray-diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides [J].

Comedi, D ;

Zalloum, OHY ;

Irving, EA ;

Wojcik, J ;

Roschuk, T ;

Flynn, MJ ;

Mascher, P .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (02)

[6] Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique [J].

Cueff, Sebastien ;

Labbe, Christophe ;

Dierre, Benjamin ;

Fabbri, Filippo ;

Sekiguchi, Takashi ;

Portier, Xavier ;

Rizk, Richard .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (11)

[7]

Delerue C, 1999, EUR MAT RES, V77, P65

[8] Time dependence and excitation spectra of the photoluminescence emission at 1.54 μm in Si-nanocluster and Er co-doped silica [J].

Falconieri, M ;

Borsella, E ;

Enrichi, F ;

Franzó, G ;

Priolo, F ;

Iacona, F ;

Gourbilleau, F ;

Rizk, R .

OPTICAL MATERIALS, 2005, 27 (05) :884-889

[9] Probe of the Si nanoclusters to Er3+ energy transfer dynamics by double-pulse excitation -: art. no. 061109 [J].

Falconieri, M ;

Borsella, E ;

De Dominicis, L ;

Enrichi, F ;

Franzò, G ;

Priolo, F ;

Iacona, F ;

Gourbilleau, F ;

Rizk, R .

APPLIED PHYSICS LETTERS, 2005, 87 (06)

[10] Sensitizing properties of amorphous Si clusters on the 1.54-μm luminescence of Er in Si-rich SiO2 [J].

Franzò, G ;

Boninelli, S ;

Pacifici, D ;

Priolo, F ;

Iacona, F ;

Bongiorno, C .

APPLIED PHYSICS LETTERS, 2003, 82 (22) :3871-3873

← 1 2 3 4 5 6 →