Temperature-dependent phonon mode and interband electronic transition evolutions of ε-InSe films derived by pulsed laser deposition

被引：4

作者：

Xie, Mingzhang ^{[1
]}

Li, Ming ^{[1
]}

Li, Liumeng ^{[1
]}

Zhang, Jinzhong ^{[1
]}

Jiang, Kai ^{[1
]}

Shang, Liyan ^{[1
]}

Li, Yawei ^{[1
]}

Hu, Zhigao ^{[1
,2
,3
]}

Chu, Junhao ^{[1
,2
,3
]}

机构：

[1] East China Normal Univ, Tech Ctr Multifunct Magnetoopt Spect Shanghai, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ,Dept Mat,Sch Phys & Elect Sci, Shanghai 200241, Peoples R China

[2] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China

[3] Fudan Univ, Shanghai Inst Intelligent Elect & Syst, Shanghai 200433, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2020年 / 117卷 / 10期

基金：

国家重点研发计划;

关键词：

RAMAN; MOS2; MOBILITY; SPECTRA;

D O I：

10.1063/5.0021330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the temperature-dependent phonon modes and interband electronic transitions of InSe films on SiO2/Si substrates prepared by pulsed laser deposition. The microstructure results proved the epsilon phase structure and monochalcogenide phase composition with well-defined hexagonal InSe sheets. The temperature effects on lattice vibrations were discovered by Raman spectra from 123K to 423K. The frequency and full width at half maximum of the A 2 g 1(LO) mode show a strong nonlinearity with the temperature. The energy band structure and electron-phonon interaction were studied by temperature-dependent spectroscopic ellipsometry with the aid of the Tauc-Lorentz model. It was found that five electronic transitions around 1.33, 1.61, 2.53, 3.73, and 4.64eV generally show a redshift trend with the temperature. The present results can provide a valuable reference for future optoelectronic applications of InSe films.

引用

页数：5

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