Room temperature fabricated flexible NiO/IGZO pn diode under mechanical strain

被引：31
作者：
Muenzenrieder, Niko [1 ]
Zysset, Christoph [1 ]
Petti, Luisa [1 ]
Kinkeldei, Thomas [1 ]
Salvatore, Giovanni A. [1 ]
Troester, Gerhard [1 ]
机构：
[1] Swiss Fed Inst Technol Zurich, Inst Elect, CH-8092 Zurich, Switzerland
来源：
SOLID-STATE ELECTRONICS | 2013年 / 87卷
关键词：
Flexible electronics; NiO; IGZO; pn-Diode; Oxide semiconductor; THIN-FILM TRANSISTORS; OXIDE SEMICONDUCTOR; CONDUCTION;
D O I：
10.1016/j.sse.2013.04.030
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Flexible electronic devices fabricated on plastic substrates require semiconductors, which can be deposited at low temperatures. While Indium-Gallium-Zinc-Oxide (IGZO) is a promising n-type oxide semiconductor, a p-type oxide semiconductor with similar performance is currently not available. Here, the room temperature deposition of nickel oxide (NiO) acting as a p-type oxide semiconductor on a flexible plastic foil is described. NiO exhibits a carrier density of +1.6 x 10(17) cm(-3) and a Hall mobility of 0.45 cm(2)/Vs. p-type NiO is combined with n-type IGZO to fabricate flexible pn diodes on a free-standing polyimide substrate. The diodes show an ideality factor of approximate to 3.2 and an on-off current-ratio of approximate to 10(4). The NiO/IGZO diodes stay fully operational when exposed to tensile or compressive mechanical strain of 0.25%, induced by bending to a radius of 10 mm. In addition, a 50 Hz AC signal was rectified using a flexible diode while flat and bent. (c) 2013 Elsevier Ltd. All rights reserved.
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收藏
页码：17 / 20
页数：4
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