Structural investigation of GaAs1-xBix/GaAs multiquantum wells

被引：56
作者：
Tominaga, Yoriko [1 ]
Kinoshita, Yusuke [1 ]
Oe, Kunishige [1 ]
Yoshimoto, Masahiro [1 ]
机构：
[1] Kyoto Inst Technol, Dept Elect, Sakyo Ku, Kyoto 6068585, Japan
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 13期
基金：
日本科学技术振兴机构;
关键词：
D O I：
10.1063/1.2993343
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs(1-x)Bi(x)/GaAs multiquantum wells (MQWs) have been grown in the layer-by-layer mode of molecular beam epitaxy. A well-defined multilayered structure of the MQWs has been confirmed by cross-sectional transmission microscopy and high-resolution x-ray diffraction measurements. Photoluminescence has been observed from GaAs(1-x)Bi(x)/GaAs MQW at room temperature. The MQW structures have been confirmed to be thermally stable even after annealing up to 800 C, although they need to be grown at a low temperature (350-400 C degrees) for Bi incorporation. (C) 2008 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 19 条
  • [1] Valence band anticrossing in GaBixAs1-x
    Alberi, K.
    Dubon, O. D.
    Walukiewicz, W.
    Yu, K. M.
    Bertulis, K.
    Krotkus, A.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (05)
  • [2] Valence-band anticrossing in mismatched III-V semiconductor alloys
    Alberi, K.
    Wu, J.
    Walukiewicz, W.
    Yu, K. M.
    Dubon, O. D.
    Watkins, S. P.
    Wang, C. X.
    Liu, X.
    Cho, Y. -J.
    Furdyna, J.
    [J]. PHYSICAL REVIEW B, 2007, 75 (04):
  • [3] GaBiAs: A material for optoelectronic terahertz devices
    Bertulis, K.
    Krotkus, A.
    Aleksejenko, G.
    Pacebutas, V.
    Adomavicius, R.
    Molis, G.
    Marcinkevicius, S.
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (20)
  • [4] Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy
    Cooke, D. G.
    Hegmann, F. A.
    Young, E. C.
    Tiedje, T.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (12)
  • [5] Influence of thermal annealing treatment on the luminescence properties of dilute GaNAs-Bismide alloy
    Feng, Gan
    Oe, Kunishige
    Yoshimoto, Masahiro
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (29-32): : L764 - L766
  • [6] Giant spin-orbit bowing in GaAs1-xBix
    Fluegel, B.
    Francoeur, S.
    Mascarenhas, A.
    Tixier, S.
    Young, E. C.
    Tiedje, T.
    [J]. PHYSICAL REVIEW LETTERS, 2006, 97 (06)
  • [7] Band gap of GaAs1-xBix, 0<x<3.6%
    Francoeur, S
    Seong, MJ
    Mascarenhas, A
    Tixier, S
    Adamcyk, M
    Tiedje, T
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (22) : 3874 - 3876
  • [8] Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates
    Henini, M.
    Ibanez, J.
    Schmidbauer, M.
    Shafi, M.
    Novikov, S. V.
    Turyanska, L.
    Molina, S. I.
    Sales, D. L.
    Chisholm, M. F.
    Misiewicz, J.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (25)
  • [9] Molecular-beam epitaxy and characteristics of GaNyAs1-x-yBix -: art. no. 053505
    Huang, W
    Oe, K
    Feng, G
    Yoshimoto, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (05)
  • [10] Structural properties of Bi-stabilized reconstructions of GaInAs(100) surface
    Laukkanen, P.
    Ahola-Tuomi, M.
    Kuzmin, M.
    Perala, R. E.
    Vayrynen, I. J.
    Tukiainen, A.
    Pakarinen, J.
    Saarinen, M.
    Pessa, M.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (08)
12