High Performance and Low Power Half-Adder Cells in Carbon Nanotube Field Effect Transistor Technology

被引：1

作者：

Sajedi, Horialsadat Hossein ^{[1
]}

Sam, Mahya ^{[2
]}

Navi, Keivan ^{[2
]}

Jalali, Ali ^{[2
]}

机构：

[1] Islamic Azad Univ, Sci & Res Branch, Dept Comp Engn, Tehran, Iran

[2] Shahid Beheshti Univ, Nanotechnol & Quantum Comp Lab, Tehran, Iran

来源：

JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE | 2015年 / 12卷 / 08期

关键词：

Half-Adder; Carbon Nanotube; Power-Delay-Product; XOR; COMPACT SPICE MODEL; INCLUDING NONIDEALITIES; LOW-VOLTAGE; CIRCUITS; DESIGN;

D O I：

10.1166/jctn.2015.3954

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this paper novel designs of half-adder cells using CNFETs for high speed applications are proposed. These designs increase speed by decreasing the number of transistors along with their critical path. The threshold voltage of a CNFET is controlled by its chirality, therefore utilizing this feature in the proposed designs leads to a reduction in the number of transistors. HSPICE simulations demonstrate that the proposed half-adder cells achieve significant performance. CNFET transistors are combined with capacitor networks with the aim of increasing speed.

引用

页码：1756 / 1760

页数：5