High Performance and Low Power Half-Adder Cells in Carbon Nanotube Field Effect Transistor Technology

被引:1
作者
Sajedi, Horialsadat Hossein [1 ]
Sam, Mahya [2 ]
Navi, Keivan [2 ]
Jalali, Ali [2 ]
机构
[1] Islamic Azad Univ, Sci & Res Branch, Dept Comp Engn, Tehran, Iran
[2] Shahid Beheshti Univ, Nanotechnol & Quantum Comp Lab, Tehran, Iran
关键词
Half-Adder; Carbon Nanotube; Power-Delay-Product; XOR; COMPACT SPICE MODEL; INCLUDING NONIDEALITIES; LOW-VOLTAGE; CIRCUITS; DESIGN;
D O I
10.1166/jctn.2015.3954
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this paper novel designs of half-adder cells using CNFETs for high speed applications are proposed. These designs increase speed by decreasing the number of transistors along with their critical path. The threshold voltage of a CNFET is controlled by its chirality, therefore utilizing this feature in the proposed designs leads to a reduction in the number of transistors. HSPICE simulations demonstrate that the proposed half-adder cells achieve significant performance. CNFET transistors are combined with capacitor networks with the aim of increasing speed.
引用
收藏
页码:1756 / 1760
页数:5
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