Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

被引：27

作者：

Carrington, P. J. ^{[1
]}

Wagener, M. C. ^{[2
]}

Botha, J. R. ^{[2
]}

Sanchez, A. M. ^{[3
]}

Krier, A. ^{[1
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] Nelson Mandela Metropolitan Univ, Dept Phys, Port Elizabeth, South Africa

[3] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 23期

基金：

英国工程与自然科学研究理事会;

关键词：

EFFICIENCY; DOTS;

D O I：

10.1063/1.4768942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs-based solar cells containing stacked layers of nanostructured type II GaSb quantum ring solar cells are reported which show significantly enhanced infrared photo-response extending out to 1400 nm. The ring formation reduces the net strain energy associated with the large lattice mismatch making it possible to stack multi-layers without the need for strain balancing. The (1 sun) short-circuit current for a 10 layer sample is enhanced by similar to 6% compared to a GaAs control cell. The corresponding open-circuit voltage of 0.6 V is close to the theoretical maximum expected from such structures. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768942]

引用

页数：5

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