Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

被引：27
作者：
Carrington, P. J. [1 ]
Wagener, M. C. [2 ]
Botha, J. R. [2 ]
Sanchez, A. M. [3 ]
Krier, A. [1 ]
机构：
[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
[2] Nelson Mandela Metropolitan Univ, Dept Phys, Port Elizabeth, South Africa
[3] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 23期
基金：
英国工程与自然科学研究理事会;
关键词：
EFFICIENCY; DOTS;
D O I：
10.1063/1.4768942
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs-based solar cells containing stacked layers of nanostructured type II GaSb quantum ring solar cells are reported which show significantly enhanced infrared photo-response extending out to 1400 nm. The ring formation reduces the net strain energy associated with the large lattice mismatch making it possible to stack multi-layers without the need for strain balancing. The (1 sun) short-circuit current for a 10 layer sample is enhanced by similar to 6% compared to a GaAs control cell. The corresponding open-circuit voltage of 0.6 V is close to the theoretical maximum expected from such structures. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768942]
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页数：5
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共 23 条
  • [1] Dependence of device performance on carrier escape sequence in multi-quantum-well p-i-n solar cells
    Alemu, A.
    Coaquira, J. A. H.
    Freundlich, A.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
  • [2] IDEAL THEORY OF QUANTUM-WELL SOLAR-CELLS
    ANDERSON, NG
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) : 1850 - 1861
  • [3] Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells
    Bailey, Christopher G.
    Forbes, David V.
    Raffaelle, Ryne P.
    Hubbard, Seth M.
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (16)
  • [4] Type II broken band heterostructure quantum dot to obtain a material for the intermediate band solar cell
    Cuadra, L
    Martí, A
    Luque, A
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 14 (1-2) : 162 - 165
  • [5] Forrest S. R., 2009, U.S. Patent, Patent No. [7,915,521, 7915521]
  • [6] Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems
    Gradkowski, K.
    Ochalski, T. J.
    Pavarelli, N.
    Liu, H. Y.
    Tatebayashi, J.
    Williams, D. P.
    Mowbray, D. J.
    Huyet, G.
    Huffaker, D. L.
    [J]. PHYSICAL REVIEW B, 2012, 85 (03):
  • [7] Effect of strain compensation on quantum dot enhanced GaAs solar cells
    Hubbard, S. M.
    Cress, C. D.
    Bailey, C. G.
    Raffaelle, R. P.
    Bailey, S. G.
    Wilt, D. M.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (12)
  • [8] Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion
    Hwang, Jinyoung
    Martin, Andrew J.
    Millunchick, Joanna M.
    Phillips, Jamie D.
    [J]. JOURNAL OF APPLIED PHYSICS, 2012, 111 (07)
  • [9] Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings
    Kamarudin, M. Ahmad
    Hayne, M.
    Young, R. J.
    Zhuang, Q. D.
    Ben, T.
    Molina, S. I.
    [J]. PHYSICAL REVIEW B, 2011, 83 (11)
  • [10] GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer
    Kamarudin, M. Ahmad
    Hayne, M.
    Zhuang, Q. D.
    Kolosov, O.
    Nuytten, T.
    Moshchalkov, V. V.
    Dinelli, F.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (06)
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