Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals

被引：11

作者：

Okuda, Takafumi ^{[1
]}

Miyake, Hiroki ^{[1
]}

Kimoto, Tsunenobu ^{[1
]}

Suda, Jun ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 01期

基金：

日本学术振兴会;

关键词：

PERSISTENT PHOTOCONDUCTIVITY; DX CENTERS; SEMICONDUCTORS;

D O I：

10.7567/JJAP.52.010202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the photoconductivity decay characteristics of p-type 4H-SiC bulk crystals by differential microwave photoconductance decay (mu-PCD) measurements using a 349-nm laser as an excitation source. The decay time at room temperature was 2600 mu s, which is much longer than that of n-type 4H-SiC bulk crystals (40 ns). Decay time decreased with increasing temperature, resulting in 120 mu s at 250 degrees C, and the activation energy of decay time was determined to be 140 +/- 10 meV. Long decay characteristics were also observed by below-band-gap excitation at 523 nm. (C) 2013 The Japan Society of Applied Physics

引用

页数：3

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