Hot carrier thermalization dynamics in low-temperature-grown III-V semiconductors

被引：0
|
作者：
Lobad, AI [1 ]
Kostoulas, Y [1 ]
Wicks, GW [1 ]
Fauchet, PM [1 ]
机构：
[1] UNIV ROCHESTER,LASER ENERGET LAB,ROCHESTER,NY 14623
来源：
HOT CARRIERS IN SEMICONDUCTORS | 1996年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：97 / 99
页数：3
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