Improving the High-Speed Response of the GaAs Metal-Semiconductor-Metal Photodetector

被引：0

作者：

Benzeghda, S. ^{[1
,2
]}

Hobar, F. ^{[1
]}

Decoster, Didier ^{[2
]}

机构：

[1] Mentouri Constantine Univ, Microsyst & Instrumentat Lab, Route Ain El Bey, Constantine 25000, Algeria

[2] Univ Sci & Technol Lille 1, IEMN, UMR CNRS 8520, BP 60069, F-59652 Villeneuve Dascq, France

来源：

2016 18TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON) | 2016年

关键词：

impulse response; MSM photodetector; space charge; TRANSIT-TIME; PHOTODIODES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The main purpose of this paper is to show the effect of charge accumulation and screening of the electric field on the Schottky Metal-semiconductor-Metal detector response and efficiency, which result of non-uniform distribution carriers along the absorption depth, and along the line between electrodes. The MSM (PD) with an active surface of 3x3 mu m(2) and electrode spacing of 0.2, 0.3, 0.5 and 1 mu m has been integrated in the central strip of coplanar lines for microwave switching application,. Several ways of improving the high-speed response of the MSM-PD are analyzed and discussed.

引用

页数：6

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