Influence of thickness on the structural, optical and electrical properties of Ga-doped ZnO thin films deposited by sputtering magnetron

被引：41

作者：

Mahdhi, H. ^{[1
]}

Alaya, S. ^{[1
]}

Gauffier, J. L. ^{[2
]}

Djessas, K. ^{[3
]}

Ben Ayadi, Z. ^{[1
]}

机构：

[1] Fac Sci Gabes, Lab Phys Mat & Nanomat Appl Environm LaPhyMNE, Erriadh Manara Zrig 6072, Gabes, Tunisia

[2] INSA Toulouse, Dept Phys, 135 Ave Rangueil, F-31077 Toulouse 4, France

[3] Univ Perpignan, Lab Proc Mat & Energie Solaire PROMES CNRS, Rambla Thermodynam, F-66100 Perpignan, France

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 695卷

关键词：

Nanostructures; Sol-gel and magnetron sputtering; Film thickness; Electrical and optical properties; ZINC-OXIDE; TRANSPARENT; NANOPARTICLES; MICROSTRUCTURE; TEMPERATURE; DEPENDENCE; RAMAN; RF;

D O I：

10.1016/j.jallcom.2016.11.117

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In the present work, we have deposited Ga-doped ZnO (GZO) thin films by magnetron sputtering technique using nanocrystalline particles elaborated by sol-gel method as a target material. The effect of the thickness, on the physical properties of the GZO thin films was analyzed. The influence of the thickness, on structure, surface morphologies, chemical atomic composition, electrical and optical properties was investigated by XRD, SEM, TEM, AFM, Raman measurement, Hall measurement and UV Vis-NIR spectrophotometer, respectively. X-ray diffraction (XRD) results revealed the polycrystalline nature of the films with hexagonal wurtzite structure having preferential orientation a long [002] direction normal to the substrate. The lowest resistivity obtained from electrical studies was 10(-)4 ohm cm. The optical properties were studied using a UV-vis spectrophotometer and the average transmittance in the visible region (400-800 nm) was found to be 90%. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：697 / 703

页数：7

共 46 条

[31] Effects of temperature on the optical and electrical properties of ZnO nanoparticles synthesized by sol-gel method [J].

Omri, K. ;

Najeh, I. ;

Dhahri, R. ;

El Ghoul, J. ;

El Mir, L. .

MICROELECTRONIC ENGINEERING, 2014, 128 :53-58

[32] A comprehensive review of ZnO materials and devices -: art. no. 041301 [J].

Ozgür, U ;

Alivov, YI ;

Liu, C ;

Teke, A ;

Reshchikov, MA ;

Dogan, S ;

Avrutin, V ;

Cho, SJ ;

Morkoç, H .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (04) :1-103

[33] Characteristics of ZnO:In thin films prepared by RF magnetron sputtering [J].

Peng, L. P. ;

Fang, L. ;

Yang, X. F. ;

Ruan, H. B. ;

Li, Y. J. ;

Huang, Q. L. ;

Kong, C. Y. .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (10) :1819-1823

[34] PROPERTIES OF ZINC-OXIDE FILMS PREPARED BY THE OXIDATION OF DIETHYL ZINC [J].

ROTH, AP ;

WILLIAMS, DF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6685-6692

[35]

Schroder D., 1990, Semiconductor Material and Device Characterization

[36] Direct synthesis of ZnO nanoparticles by a solution-free mechanochemical reaction [J].

Shen, Liming ;

Bao, Ningzhong ;

Yanagisawa, Kazumichi ;

Domen, Kazunari ;

Gupta, Arunava ;

Grimes, Craig A. .

NANOTECHNOLOGY, 2006, 17 (20) :5117-5123

[37] Synthesis of radial ZnO nanostructures by a simple thermal evaporation method [J].

Tang, Haiping ;

Ye, Zhizhen ;

Zhu, Liping ;

He, Haiping ;

Zha, Binghui ;

Zhang, Yang ;

Zhi, Mingjia ;

Yang, Zhixiang .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (03) :507-511

[38] OPTICAL PROPERTIES AND ELECTRONIC STRUCTURE OF AMORPHOUS [J].

TAUC, J .

MATERIALS RESEARCH BULLETIN, 1968, 3 (01) :37-&

[39] Structural and optical properties of single-crystalline ZnO nanorods grown on silicon by thermal evaporation [J].

Umar, A. ;

Karunagaran, B. ;

Suh, E-K ;

Hahn, Y. B. .

NANOTECHNOLOGY, 2006, 17 (16) :4072-4077

[40] Structural and magnetic property of Co-doped-ZnO thin films prepared by pulsed laser deposition [J].

Van, L. H. ;

Hong, M. H. ;

Ding, J. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2008, 449 (1-2) :207-209

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