Optical properties of cubic GaN grown on SiC Si substrates

被引：17

作者：

Philippe, A

Bru-Chevallier, C

Vernay, M

Guillot, G

Hübner, J

Daudin, B

Feuillet, G

机构：

[1] Inst Natl Sci Appl Lyon, Phys Mat Lab, CNRS, UMR 5511, F-69621 Villeurbanne, France

[2] CEA Grenoble, DRFMC, PSC, F-38054 Grenoble 09, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 59卷 / 1-3期

关键词：

cubic GaN; SiC Si substrates; photoluminescence; photoreflectance;

D O I：

10.1016/S0921-5107(98)00413-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical properties of MBE cubic GaN layers grown on SiC/Si substrates were studied by photoreflectance and photoluminescence. From 9 K PR measurements, we derive the two excitons energies at 3.268 and 3.283 eV. We evidence that the PL excitonic transition observed at 3.265 eV is a combination of both donor-bound and free excitonic recombinations. Two overlapped PL components are observed at about 3.13 and 3.15 eV. The analysis of these lines behaviour as a function of temperature and excitation power allows their attribution to the D-A and e-A recombinations. Their relative intensity strongly depends on the V/III ratio. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：168 / 172

页数：5

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