1.3-μm Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon

被引:83
作者
Duan, Jianan [1 ]
Huang, Heming [1 ]
Dong, Bozhang [1 ]
Jung, Daehwan [2 ,3 ]
Norman, Justin C. [2 ]
Bowers, John E. [2 ,4 ]
Grillot, Frederic [1 ,5 ]
机构
[1] Univ Paris Saclay, Telecom ParisTech, LTCI, F-75013 Paris, France
[2] Univ Calif Santa Barbara, Dept Mat, Inst Energy Efficiency, Santa Barbara, CA 93106 USA
[3] Korea Inst Sci & Technol, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea
[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[5] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
关键词
Semiconductor lasers; quantum dots; photonics integrated circuits; optical feedback; OPTICAL FEEDBACK DYNAMICS; SENSITIVITY;
D O I
10.1109/LPT.2019.2895049
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter reports on a 1.3-mu m reflection insensitive transmission with a quantum dot laser directly grown on silicon in the presence of strong optical feedback. These results show a penalty-free transmission at 10 GHz under external modulation with -7.4-dB optical feedback. The feedback insensitivity results from the low linewidth enhancement factor, the high damping, the absence of off-resonance emission states, and the shorter carrier lifetime. This letter paves the way for future on chip high-speed integrated circuits operating without optical isolators.
引用
收藏
页码:345 / 348
页数:4
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