Stress analyses of GaN film manufactured by ECR plasma-enhanced chemical vapor deposition

被引：10

作者：

Fu Silie ^{[1
]}

Chen Junfang ^{[1
]}

Gao Peng ^{[1
]}

Wang Chun-ann ^{[2
]}

机构：

[1] S China Normal Univ, Sch Phys & Commun Engn, Guangzhou 510006, Guangdong, Peoples R China

[2] GuangDong Polytech Normal Univ, Sch Elect & Informat, Guangzhou 510665, Guangdong, Peoples R China

来源：

VACUUM | 2012年 / 86卷 / 10期

关键词：

GaN film; ECR-PECVD; Residual stress; X-ray diffraction; Photoluminescence; MOLECULAR-BEAM EPITAXY; LIGHT-EMITTING DIODES; RESIDUAL-STRESS; GALLIUM NITRIDE; OPTICAL-PROPERTIES; RESONANCE; SUBSTRATE; SAPPHIRE; SILICON; SI(111);

D O I：

10.1016/j.vacuum.2011.12.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The residual stress in GaN film grown on (0001) alpha-Al2O3 substrate at 450-500 degrees C by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) is investigated. Macro deformation analysis reveals a low level of compressive stress, from -0.46 GPa to -1.03 GPa in GaN/Sapphire. Low growth temperature and high N-2:TMG flow ratio contributes to decreasing of residual stress. A blue shift for the edge peak in photoluminescence analysis (PL) is related to compressive stress. Roughness statistics and AFM morphology of GaN film show a fine smoothness and uniform surface. All results demonstrate that ECR-PECVD process is favorable for depositing GaN films at low temperature. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：1517 / 1521

页数：5

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