REFET Replication for ISFET-based SNP Detection Arrays

被引：0

作者：

Sohbati, Mohammadreza ^{[1
]}

Georgiou, Pantelis ^{[1
]}

Toumazou, Christofer ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, Ctr Bioinspired Technol, London SW7 2AZ, England

来源：

2013 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2013年

关键词：

FIELD-EFFECT TRANSISTOR; LOW-FREQUENCY NOISE; ELECTRODE; DRIFT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In-pixel differential measurement with calibration for chemical reaction occurrence detection, particularly for pH-based Single Nucleotide Polymorphism (SNP) detection and genotyping arrays is presented. The proposed work adjusts the offset of upto 130 mV between the ISFETs and the REFET in a calibration step and cancels out common mode noise by differential pairs with a 63.5 dB CMRR. Conventionally in such arrays Ion-sensitive Field-effect Transistors were used as sensors with interface circuitry, requiring conversion of the signal prior to processing. In this system they form part of the conditioning circuitry, improving the signal-to-noise ratio and easing the design constraints of intelligent large scale system-on-chips.

引用

页码：185 / 188

页数：4

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