Structure, thermodynamics, and crystallization of amorphous hafnia

被引:13
作者
Luo, Xuhui [1 ]
Demkov, Alexander A. [1 ]
机构
[1] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA
基金
美国国家科学基金会;
关键词
ATOMIC LAYER DEPOSITION; HFO2; THIN-FILMS; MOLECULAR-DYNAMICS; GATE DIELECTRICS; SILICON; OXIDES; ALD;
D O I
10.1063/1.4931157
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate theoretically amorphous hafnia using the first principles melt and quench method. We identify two types of amorphous structures of hafnia. Type I and type II are related to tetragonal and monoclinic hafnia, respectively. We find type II structure to show stronger disorder than type I. Using the phonon density of states, we calculate the specific heat capacity for type II amorphous hafnia. Using the nudged elastic band method, we show that the averaged transition barrier between the type II amorphous hafnia and monoclinic phase is approximately 0.09 eV/HfO2. The crystallization temperature is estimated to be 421 K. The calculations suggest an explanation for the low thermal stability of amorphous hafnia. (C) 2015 AIP Publishing LLC.
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收藏
页数:9
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共 44 条
  • [1] Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition
    Aarik, J
    Aidla, A
    Mändar, H
    Sammelselg, V
    Uustare, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2000, 220 (1-2) : 105 - 113
  • [2] [Anonymous], 2007, 2013 INT TECHN ROADM
  • [3] Ashcroft N. W., 1975, SOLID STATE PHYS
  • [4] Phase transition in sputtered HfO2 thin films: A qualitative Raman study
    Belo, G. S.
    Nakagomi, F.
    Minko, A.
    da Silva, S. W.
    Morais, P. C.
    Buchanan, D. A.
    [J]. APPLIED SURFACE SCIENCE, 2012, 261 : 727 - 729
  • [5] Binder K., 2005, Glassy Materials and Disordered Solids, an Introduction to Their Statistical Mechanics
  • [6] Structural and dielectric properties of amorphous ZrO2 and HfO2
    Ceresoli, Davide
    Vanderbilt, David
    [J]. PHYSICAL REVIEW B, 2006, 74 (12):
  • [7] First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism
    Clima, S.
    Chen, Y. Y.
    Degraeve, R.
    Mees, M.
    Sankaran, K.
    Govoreanu, B.
    Jurczak, M.
    De Gendt, S.
    Pourtois, G.
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (13)
  • [8] OXYGEN SELF-DIFFUSION IN QUARTZ UNDER HYDROTHERMAL CONDITIONS
    DENNIS, PF
    [J]. JOURNAL OF GEOPHYSICAL RESEARCH, 1984, 89 (NB6): : 4047 - 4057
  • [9] Interface of ultrathin HfO2 films deposited by UV-photo-CVD
    Fang, Q
    Zhang, JY
    Wang, Z
    Modreanu, M
    O'Sullivan, BJ
    Hurley, PK
    Leedham, TL
    Hywel, D
    Audier, MA
    Jimenez, C
    Senateur, JP
    Boyd, IW
    [J]. THIN SOLID FILMS, 2004, 453 : 203 - 207
  • [10] AB-INITIO FORCE-CONSTANT METHOD FOR PHONON DISPERSIONS IN ALKALI-METALS
    FRANK, W
    ELSASSER, C
    FAHNLE, M
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (10) : 1791 - 1794