Sprout inhibition in potato (Solanum tuberosum L.) with low energy electrons

The healthy and well suberized potatoes (Solanum tuberosum cultivar 'Kufri Jyoti') were exposed with low energy electrons of 400 and 500 keV and stored at 10-12 degrees C and 99% relative humidity (RH) for 8 months. The aim was to assess the efficacy of surface irradiation of potato for sprout inhibition at lower doses (100, 200, 300, 400 and 500 Gy) on storage at elevated temperature of 10-12 degrees C. Unirradiated potatoes were sprouted within 2-3 months of storage. In electron beam irradiated potato. at 400 keV a dose of 400 Gy and at 500 keV a dose of 200 Gy inhibited sprouting. These closes were higher than those recommended for gamma-radiation (60-150 Gy) for the same purpose. At the end of 8 months. irradiated and unirradiated potato were evaluated for reducing sugar, ascorbic acid, texture, colour and chip quality. The results suggested the efficacy of surface irradiation of potato with low energy electrons for sprout inhibition, shelf-life extension and improvement in the processing quality of tubers by allowing storage at elevated temperature of 10-12 degrees C.