Design of Broadband Three-way Sequential Power Amplifiers

被引：0

作者：

Shao, Jin ^{[1
,3
,5
]}

Ma, Rui ^{[1
]}

Shinjo, Shintaro ^{[2
]}

Chung, SungWon ^{[1
,4
,6
]}

Teo, Koon Hoo ^{[1
]}

机构：

[1] Mitsubishi Elect Res Labs, Cambridge, MA 02139 USA

[2] Mitsubishi Electr Corp, Informat Tech R&D Ctr, Kamakura, Kanagawa 2478501, Japan

[3] Univ North Texas, Denton, TX 76203 USA

[4] MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA

[5] Infineon Technol, Morgan Hill, CA USA

[6] Univ Southern Calif, Los Angeles, CA USA

来源：

2016 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2016年

关键词：

Broadband; Efficiency; GaN; Sequential power amplifier; three-way; two-way; 4G;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report a fully analog three-way sequential power amplifiers (SPA) using 10W GaN HEMTs. The proposed three-way SPA delivers Psat of 39 similar to 40 dBm over 2.45-2.8 GHz covering a 15.4% fractional bandwidth. The three-way SPA includes a 2:1:1 multi-way splitter, a carrier amplifier, two peaking amplifiers, and a 7:1.5:1.5 combiner for power combining. The measured three-way SPA shows 41% to 44% drain efficiency (DE) at 31 dBm (9 dB backoff) output from 2.5 to 2.8 GHz under CW stimulus. To the best of the authors' knowledge, the proposed three-way SPA is the first time reported three-way SPA in literature.

引用

页数：3

共 10 条

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