Degradation of the piezoelectric response of sputtered c-axis AlN thin films with traces of non-(0002) x-ray diffraction peaks

被引:82
作者
Sanz-Hervás, A [1 ]
Clement, M [1 ]
Iborra, E [1 ]
Vergara, L [1 ]
Olivares, J [1 ]
Sangrador, J [1 ]
机构
[1] Univ Politecn Madrid, Grp Microsistemas & Mat Elect, Dept Tecnol Elect, Escuela Tecn Super Ingn Telecommun, E-28040 Madrid, Spain
关键词
D O I
10.1063/1.2191425
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have observed the apparently anomalous behavior of sputtered AlN thin films that exhibit poor piezoelectric response in spite of having (0002) preferred orientation and narrow rocking curve with full width at half maximum below 2 degrees; however, other AlN films with weak 0002 x-ray diffraction peak and rocking curve as wide as 8 degrees provide a good value of the piezoelectric coefficient d(31) (2.1 pm/V). The critical difference between both types of films is the presence of traces of non-(0002) reflections in the x-ray diffraction patterns of the former. Non-(0002) reflections may be related to defects (probably, inversion domains) that significantly reduce the net piezoelectric field. (c) 2006 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 13 条
[1]   Structural, optical, and acoustic characterization of high-quality AlN thick films sputtered on Al2O3(0001) at low temperature for GHz-band electroacoustic devices applications [J].
Caliendo, C ;
Imperatori, P .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) :2610-2615
[2]   Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering [J].
Dubois, MA ;
Muralt, P .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :6389-6395
[3]   Synthesis of highly oriented piezoelectric AlN films by reactive sputter deposition [J].
Engelmark, F ;
Fucntes, G ;
Katardjiev, IV ;
Harsta, A ;
Smith, U ;
Berg, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04) :1609-1612
[4]  
IBORRA E, 2004, IEEE T ULTRASON FERR, V2, P1880
[5]   Inversion domains in AlN grown on (0001) sapphire [J].
Jasinski, J ;
Liliental-Weber, Z ;
Paduano, QS ;
Weyburne, DW .
APPLIED PHYSICS LETTERS, 2003, 83 (14) :2811-2813
[6]  
LANZ R, 2003, P IEEE ULTRASON S, V1, P178
[7]   Piezoelectric thin AlN films for bulk acoustic wave (BAW) resonators [J].
Loebl, HP ;
Klee, M ;
Metzmacher, C ;
Brand, W ;
Milsom, R ;
Lok, P .
MATERIALS CHEMISTRY AND PHYSICS, 2003, 79 (2-3) :143-146
[8]   Thickness dependence of the properties of highly c-axis textured AlN thin films [J].
Martin, F ;
Muralt, P ;
Dubois, MA ;
Pezous, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (02) :361-365
[9]  
MISHIN S, 2003, P IEEE ULTRASON S, V1, P2028
[10]   Measurements of the bulk, C-axis electromechanical coupling constant as a function of AlN film quality [J].
Naik, RS ;
Lutsky, JJ ;
Reif, R ;
Sodini, CG ;
Becker, A ;
Fetter, L ;
Huggins, H ;
Miller, R ;
Pastalan, J ;
Rittenhouse, G ;
Wong, YH .
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2000, 47 (01) :292-296