A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs

被引:4
作者
Schwantuschke, Dirk [1 ]
Haupt, Christian [1 ]
Kiefer, Rudolf [1 ]
Brueckner, Peter [1 ]
Seelmann-Eggebert, Matthias [1 ]
Tessmann, Axel [1 ]
Mikulla, Michael [1 ]
Kallfass, Ingmar [1 ,2 ]
Quay, Ruediger [1 ]
机构
[1] Fraunhofer Inst Appl Solid State Phys IAF, D-79108 Freiburg, Germany
[2] Karlsruhe Inst Technol, Inst Hochfrequenztech & Elekt, D-76131 Karlsruhe, Germany
关键词
100 nm AlGaN/GaN; dual-gate HEMT; millimeter-wave GaN HEMT; power amplifier; millimeter-wave amplification; V-band; MMIC; GAN MMICS;
D O I
10.1017/S1759078712000177
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line technology using AlGaN/GaN dual-gate High electron mobility transistors (HEMTs) with a gate-length of 100 nm to achieve a high gain per stage and high output power. A large-signal model was extracted for the dual-gate HEMT based on the state-space approach. For the fabricated dual-stage amplifier a continuous-wave saturatedoutput power of up to 24.8 dBm (0.84 W/mm) was measured at 63 GHz for 20 V drain bias. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.
引用
收藏
页码:267 / 274
页数:8
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