A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs

被引：5

作者：

Schwantuschke, Dirk ^{[1
]}

Haupt, Christian ^{[1
]}

Kiefer, Rudolf ^{[1
]}

Brueckner, Peter ^{[1
]}

Seelmann-Eggebert, Matthias ^{[1
]}

Tessmann, Axel ^{[1
]}

Mikulla, Michael ^{[1
]}

Kallfass, Ingmar ^{[1
,2
]}

Quay, Ruediger ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, D-79108 Freiburg, Germany

[2] Karlsruhe Inst Technol, Inst Hochfrequenztech & Elekt, D-76131 Karlsruhe, Germany

来源：

INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES | 2012年 / 4卷 / 03期

关键词：

100 nm AlGaN/GaN; dual-gate HEMT; millimeter-wave GaN HEMT; power amplifier; millimeter-wave amplification; V-band; MMIC; GAN MMICS;

D O I：

10.1017/S1759078712000177

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line technology using AlGaN/GaN dual-gate High electron mobility transistors (HEMTs) with a gate-length of 100 nm to achieve a high gain per stage and high output power. A large-signal model was extracted for the dual-gate HEMT based on the state-space approach. For the fabricated dual-stage amplifier a continuous-wave saturatedoutput power of up to 24.8 dBm (0.84 W/mm) was measured at 63 GHz for 20 V drain bias. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.

引用

页码：267 / 274

页数：8

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