Capacitance-Voltage (C-V) Properties of ZnO:Al/p-Si Heterojunctions

被引：1

作者：

Baydogan, N. ^{[1
]}

Gokce, Y. ^{[2
]}

Baydogan, M. ^{[2
]}

Cimenoglu, H. ^{[2
]}

机构：

[1] Istanbul Tech Univ, Energy Inst, TR-34469 Istanbul, Turkey

[2] Istanbul Tech Univ, Met & Mat Engn Dept, TR-34469 Istanbul, Turkey

来源：

DIFFUSION IN SOLIDS AND LIQUIDS VIII | 2013年 / 334-335卷

关键词：

Capacitance-Voltage characteristics; sol-gel; zinc oxide; RAY ATTENUATION COEFFICIENTS; BORATE GLASSES;

D O I：

10.4028/www.scientific.net/DDF.334-335.349

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO:Al/p-Si heterojunctions were fabricated by sol-gel dip coating technique onto p-type Si wafer substrates. Capacitance-Voltage (C-V) characteristics of ZnO:Al/p-Si heterojunctions were determined after the ZnO:Al thin film coated Si wafers were annealed at 700 and 800 degrees C, respectively. C-V results indicate an abrupt interface.

引用

页码：349 / +

页数：2

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