Ultralow Energy, Integrated GeSi Electroabsorption Modulators on SOI

被引：7

作者：

Liu, Jifeng ^{[1
]}

Beals, Mark ^{[1
]}

Pomerene, Andrew ^{[2
]}

Bemardis, Sarah ^{[1
]}

Sun, Rong ^{[1
]}

Cheng, Jing ^{[1
]}

Kimerling, Lionel C. ^{[1
]}

Michel, Jurgen ^{[1
]}

机构：

[1] MIT, Microphoton Ctr, 77 Massachusetts Ave, Cambridge, MA 02139 USA

[2] Semicond Technol Ctr, BAE Syst, Manassas, VA 20110 USA

来源：

2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | 2008年

关键词：

D O I：

10.1109/GROUP4.2008.4638079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a waveguide-integrated, gigahertz GeSi electroabsorption modulator on SOI with a 10 dB extinction ratio at 1540 nm, a ultralow energy consumption of 50 fJ/bit, and an operation spectrum range of 1539-1553 nm.

引用

页码：10 / 12

页数：3

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