GaAs under Intense Photoexcitation: Ultrafast Carrier and Phonon Dynamics

被引：0
作者：
Basak, Amlan [1 ]
Hase, Muneaki [2 ]
Kitajima, Masahiro [3 ]
Petek, Hrvoje [1 ]
机构：
[1] Univ Pittsburgh, Dept Phys & Astron, 3941 Ohara St, Pittsburgh, PA 15260 USA
[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
来源：
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ultrafast eletro-optic sampling is used to observe the response of n-doped GaAs with varying photoexcitation. Photocarrier density dependent coherent LO phonon-plasmon dynamics are observed. Time-resolved analysis reveals complex spectral evolution. (C) 2008 Optical Society of America
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页码：3102 / +
页数：2
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