GaAs under Intense Photoexcitation: Ultrafast Carrier and Phonon Dynamics

被引：0
作者：
Basak, Amlan [1 ]
Hase, Muneaki [2 ]
Kitajima, Masahiro [3 ]
Petek, Hrvoje [1 ]
机构：
[1] Univ Pittsburgh, Dept Phys & Astron, 3941 Ohara St, Pittsburgh, PA 15260 USA
[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
来源：
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ultrafast eletro-optic sampling is used to observe the response of n-doped GaAs with varying photoexcitation. Photocarrier density dependent coherent LO phonon-plasmon dynamics are observed. Time-resolved analysis reveals complex spectral evolution. (C) 2008 Optical Society of America
引用
收藏
页码：3102 / +
页数：2
相关论文
共 50 条
  • [31] Ultrafast carrier phonon dynamics in NaOH-reacted graphite oxide film
    Lee, Dongwook
    Zou, Xingquan
    Zhu, Xi
    Seo, J. W.
    Cole, Jacqueline M.
    Bondino, Federica
    Magnano, Elena
    Nair, Saritha K.
    Su, Haibin
    APPLIED PHYSICS LETTERS, 2012, 101 (02)
  • [32] Ultrafast carrier and phonon dynamics in Bi2Se3 crystals
    Qi, J.
    Chen, X.
    Yu, W.
    Cadden-Zimansky, P.
    Smirnov, D.
    Tolk, N. H.
    Miotkowski, I.
    Cao, H.
    Chen, Y. P.
    Wu, Y.
    Qiao, S.
    Jiang, Z.
    APPLIED PHYSICS LETTERS, 2010, 97 (18)
  • [33] Ultrafast carrier and phonon dynamics in thin films of bismuth telluride on a flexible substrate
    Pandey, Animesh
    Sharma, Alka
    Vashistha, Nikita
    Kumar, Sumit
    Yadav, Reena
    Kaur, Mandeep
    Kumar, Mahesh
    Husale, Sudhir
    OPTICAL MATERIALS, 2022, 128
  • [34] Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers
    Khusyainov, D. I.
    Dekeyser, C.
    Buryakov, A. M.
    Mishina, E. D.
    Galiev, G. B.
    Klimov, E. A.
    Pushkarevt, S. S.
    Klochkov, A. N.
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2017, 31 (27):
  • [35] Ultrafast carrier dynamics in Au/GaAs interfaces studied by terahertz emission spectroscopy
    Shi, YL
    Yang, YP
    Xu, XL
    Ma, SH
    Yan, W
    Wang, L
    APPLIED PHYSICS LETTERS, 2006, 88 (16)
  • [36] Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs
    Lloyd-Hughes, J.
    Merchant, S. K. E.
    Fu, L.
    Tan, H. H.
    Jagadish, C.
    Castro-Camus, E.
    Johnston, M. B.
    APPLIED PHYSICS LETTERS, 2006, 89 (23)
  • [37] Ultrafast Carrier Dynamics in Graphene under a High Electric Field
    Tani, Shuntaro
    Blanchard, Francois
    Tanaka, Koichiro
    PHYSICAL REVIEW LETTERS, 2012, 109 (16)
  • [38] Ultrafast hole-phonon interactions in GaAs
    Del Fatti, N
    Langot, P
    Tommasi, R
    Vallee, F
    APPLIED PHYSICS LETTERS, 1997, 71 (01) : 75 - 77
  • [39] Engineering Ultrafast Carrier Dynamics at the Graphene/GaAs Interface by Bulk Doping Level
    Yang, Jinghuan
    Sun, Quan
    Liu, Wei
    Zhang, Zhibin
    Hu, Xiaoyong
    Liu, Kaihui
    Yang, Hong
    Misawa, Hiroaki
    Gong, Qihuang
    ADVANCED OPTICAL MATERIALS, 2019, 7 (19)
  • [40] Ultrafast photoexcitation dynamics in a ladder-type oligophenyl
    Stagira, S
    Gadermaier, C
    Lanzani, G
    Cerullo, G
    Zavelani-Rossi, M
    Scherf, U
    Leising, G
    De Silvestri, S
    SYNTHETIC METALS, 2001, 119 (1-3) : 609 - 610
12345