GaAs under Intense Photoexcitation: Ultrafast Carrier and Phonon Dynamics

被引：0

作者：

Basak, Amlan ^{[1
]}

Hase, Muneaki ^{[2
]}

Kitajima, Masahiro ^{[3
]}

Petek, Hrvoje ^{[1
]}

机构：

[1] Univ Pittsburgh, Dept Phys & Astron, 3941 Ohara St, Pittsburgh, PA 15260 USA

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultrafast eletro-optic sampling is used to observe the response of n-doped GaAs with varying photoexcitation. Photocarrier density dependent coherent LO phonon-plasmon dynamics are observed. Time-resolved analysis reveals complex spectral evolution. (C) 2008 Optical Society of America

引用

页码：3102 / +

页数：2

共 6 条

[1] Interaction of electron and hole plasma with coherent longitudinal optical phonons in GaAs [J].

Chang, YM .

APPLIED PHYSICS LETTERS, 2002, 80 (14) :2487-2489

[2] The birth of a quasiparticle in silicon observed in time-frequency space [J].

Hase, M ;

Kitajima, M ;

Constantinescu, AM ;

Petek, H .

NATURE, 2003, 426 (6962) :51-54

[3] Ultrafast decay of coherent plasmon-phonon coupled modes in highly doped GaAs [J].

Hase, M ;

Nakashima, S ;

Mizoguchi, K ;

Harima, H ;

Sakai, K .

PHYSICAL REVIEW B, 1999, 60 (24) :16526-16530

[4] IDENTIFYING THE DISTINCT PHASES OF CARRIER TRANSPORT IN SEMICONDUCTORS WITH 10-FS RESOLUTION [J].

HU, BB ;

DESOUZA, EA ;

KNOX, WH ;

CUNNINGHAM, JE ;

NUSS, MC ;

KUZNETSOV, AV ;

CHUANG, SL .

PHYSICAL REVIEW LETTERS, 1995, 74 (09) :1689-1692

[5] GENERATION MECHANISM FOR COHERENT LO PHONONS IN SURFACE-SPACE-CHARGE FIELDS OF III-V-COMPOUNDS [J].

PFEIFER, T ;

DEKORSY, T ;

KUTT, W ;

KURZ, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 55 (05) :482-488

[6]

SHAH J, ULTRAFAST SPECTROSCO

← 1 →