Tuning near field radiation by doped silicon

被引：123

作者：

Shi, Jiawei ^{[1
]}

Li, Pengfei ^{[1
]}

Liu, Baoan ^{[1
]}

Shen, Sheng ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Dept Mech Engn, Pittsburgh, PA 15213 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 18期

基金：

美国国家科学基金会; 美国安德鲁·梅隆基金会;

关键词：

HEAT-TRANSFER; NANOSCALE; ENERGY;

D O I：

10.1063/1.4804631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we demonstrate theoretically and experimentally that bulk silicon can be employed to overcome the challenge of tuning near field radiation. Theoretical calculation shows that the nanoscale radiation between bulk silicon and silicon dioxide can be tuned by changing the carrier concentration of silicon. Near field radiation measurements are carried out on multiple bulk silicon samples with different doping concentrations. The measured near field conductance agrees well with theoretical predictions, which demonstrates a tuning range from 2 nW/K to 6 nW/K at a gap of similar to 60 nm. (C) 2013 AIP Publishing LLC.

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