Selective etching of InGaAs/InP substrates from II-VI multilayer heterostructures

被引：3

作者：

Moug, R. ^{[1
]}

Alfaro-Martinez, A. ^{[1
]}

Peng, L. ^{[2
]}

Garcia, T. ^{[1
]}

Deligiannakis, V. ^{[2
]}

Shen, A. ^{[3
]}

Tamargo, M. ^{[1
]}

机构：

[1] CUNY City Coll, Grove Sch Engn, Dept Chem, New York, NY 10031 USA

[2] Grove Sch Engn, Dept Phys, New York, NY 10031 USA

[3] Grove Sch Engn, Dept Elect Engn, New York, NY 10031 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 8-9 | 2012年 / 9卷 / 8-9期

基金：

美国国家科学基金会;

关键词：

selective etching; InGaAs; II-VI heterostructures; LIFT-OFF; INP;

D O I：

10.1002/pssc.201100716

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Typically, II-VI heterostructures and devices are grown on commercially available III-V substrates. Often these substrates have strong absorption at the emission energy of the epitaxial layer, a problem when transmission measurements are required, as well as for some device applications. By removing the epilayers from the substrate the layer properties can be examined unhindered by the presence of the substrate. In this paper we present a selective etching technique for the removal of InGaAs/InP substrates from ZnMgCdSe-based epitaxial structures. Characterization of the materials after etching indicated the material is not damaged in the etching process. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1728 / 1731

页数：4

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