Hydrogen in porous silicon - A review

被引：58
作者：
Manilov, A. I. [1 ]
Skryshevsky, V. A. [1 ]
机构：
[1] Kiev Natl Taras Shevchenko Univ, Inst High Technol, UA-01033 Kiev, Ukraine
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2013年 / 178卷 / 15期
关键词：
Porous silicon; Hydrogen; Nanotechnology; SENSITIVE MOS-STRUCTURES; ELECTRICAL BEHAVIOR; PHOTOLUMINESCENCE INTENSITY; ELECTRONIC-PROPERTIES; NANOPOROUS SILICON; SUBSTRATE MATERIAL; OPTICAL-PROPERTIES; GAS SENSORS; LIGHT; SURFACE;
D O I：
10.1016/j.mseb.2013.05.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This review is devoted to summarising the hydrogen-assisted properties and applications of porous silicon (PS). The role of hydrogen as an intermediate product in silicon porosification technology is accentuated. The regularities of hydrogen bonding in PS and its applications for hydrogen storage are listed. The models of hydrogen influence on luminescence and electrical properties of PS are analysed. The corresponding applications of PS for H-2 gas sensors and pH metres are illustrated. Hydrogen-assisted explosion and grafting of PS are discussed. Such a review can be useful for the tailoring of PS properties. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：942 / 955
页数：14
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