Heavily carbon-doped P-type GaAs grown on GaAs substrates with various orientations by metalorganic molecular beam epitaxy

Heavily carbon-doped p-type GaAs epitaxial layers have been grown on (100), (711)A, (411)A, (411)B, (111)A and (111)B semi-insulating (SI) GaAs substrates simultaneously, by metalorganic molecular beam epitaxy (MOMBE) using elemental As (As-4) and trimethylgallium (TMG) for the first time. It was found that the hole concentration depends strongly on the substrate orientation. The highest hole concentration, which was measured by Hall measurement, was obtained in the layer grown on. (411)A substrate at a growth temperature of 385 degrees C. By X-ray rocking curve analysis, it was also revealed that the largest lattice mismatch of Delta d/d = -0.48% due to heavy doping of carbon occurred on the sample grown on (411)A substrate. The hole concentration determined by Hall measurement was in good agreement with the carbon concentration determined by X-ray rocking curve analysis.