Charged steps on III-V compound semiconductor surfaces

被引：26

作者：

Heinrich, M

Domke, C

Ebert, P

Urban, K

机构：

[1] Institut für Festkörperforschung, Forschungszentrum Jülich GmbH

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.53.10894

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical charge of steps on (110) surfaces of InP, Gap, and GaAs is probed by scanning tunneling microscopy. It is demonstrated that step edges, with and without kinks, are charged and have localized defect states in the band gap. The charge of indium-terminated step edges on p-type doped InP(110) after annealing is found to be independent of the step orientation, while a strong orientation dependence is observed for phosphorus-terminated steps. This is explained by a partial compensation of the charge due to rebonding after phosphorus desorption. The magnitude of charge is estimated to be in the range of +1e to +3e per lattice spacing.

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收藏

页码：10894 / 10897

页数：4

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