Nonlinear optical characterization and measurement of optical limiting threshold of CdSe quantum dots prepared by a microemulsion technique

被引:22
|
作者
Mathew, S. [1 ,2 ]
Saran, Amit D. [3 ]
Joseph, Santhi Ani [1 ]
Bhardwaj, Bishwajeet Singh [2 ]
Punj, Deep [2 ]
Radhakrishnan, P. [1 ,2 ]
Nampoori, V. P. N. [1 ]
Vallabhan, C. P. G. [1 ]
Bellare, Jayesh R. [3 ,4 ]
机构
[1] Cochin Univ Sci & Technol, Int Sch Photon, Kochi 682022, India
[2] Cochin Univ Sci & Technol, Ctr Excellence Lasers & Optoelect Sci, Kochi 682022, India
[3] Indian Inst Technol, Dept Chem Engn, Bombay 400076, Maharashtra, India
[4] Indian Inst Technol, Sch Biosci & Bioengn, Bombay 400076, Maharashtra, India
关键词
Z-SCAN TECHNIQUE; NANOPARTICLES; NANOCRYSTALS; POLYMER; ENHANCEMENT; ABSORPTION; EMISSION; CLUSTERS; CDTE;
D O I
10.1007/s10854-011-0481-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
CdSe quantum dots prepared by micro emulsion technique shows quantum confinement effect and broad emission at 532 nm. These quantum dots have about 4.35 nm size, and they exhibit good nonlinear effects which are measured using z-scan technique. The samples have a reverse saturation in the nonlinear absorption as nonlinear optical absorption coefficient beta is 2.545 x 10(-10) W m(-1) and nonlinear optical refraction coefficient n(2) is -1.77 x 10(-10) esu. The third-order nonlinear optical susceptibility is found to be 4.646 x 10(-11) esu and also the figure of merit is 2.01 x 10(-12) esu m. The optical limiting threshold which is found to be 0.346 GW/cm(2) makes it a good candidate for device fabrication.
引用
收藏
页码:739 / 745
页数:7
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