Manipulating Surface-Related Ferromagnetism in Modulation-Doped Topological Insulators

被引：72

作者：

Kou, Xufeng ^{[1
]}

He, Liang ^{[1
]}

Lang, Murong ^{[1
]}

Fan, Yabin ^{[1
]}

Wong, Kin ^{[1
]}

Jiang, Ying ^{[2
,3
]}

Nie, Tianxiao ^{[1
]}

Jiang, Wanjun ^{[1
]}

Upadhyaya, Pramey ^{[1
]}

Xing, Zhikun ^{[1
]}

Wang, Yong ^{[2
,3
]}

Xiu, Faxian ^{[4
]}

Schwartz, Robert N. ^{[1
]}

Wang, Kang L. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

[2] Zhejiang Univ, Ctr Electron Microscopy, Hangzhou 310027, Peoples R China

[3] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[4] Iowa State Univ, Dept Elect & Comp Engn, Ames, IA 50011 USA

来源：

NANO LETTERS | 2013年 / 13卷 / 10期

基金：

美国国家科学基金会;

关键词：

Topological insulator; modulation-doped growth; TI heterostructures; surface-related magnetism; PHASE-TRANSITION; DIRAC-FERMION; THIN-FILMS; TRANSPORT; EXCHANGE; TEXTURE; BI2SE3;

D O I：

10.1021/nl4020638

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new class of devices based on topological insulators (TI) can be achieved by the direct engineering of the time-reversal-symmetry (TRS) protected surface states. In the meantime, a variety of interesting phenomena are also expected when additional ferromagnetism is introduced to the original topological order. in this Letter, we report the magnetic responses from the magnetically modulation-doped (BizSb1-z)(2)Te-3/Cr-x(BiySb1-y)(2)Te, bilayer films. By electrically tuning the Fermi level across the.Dirac point, we show that the top TI surface carriers can effectively mediate the magnetic impurities and generate robust ferromagnetic order. More importantly, such surface magneto-electric effects can be either enhanced or suppressed, depending on the magnetic interaction range inside the TI heterostructures. The manipulation of surface-related ferromagnetism realized in our modulation-doped TI device is important for the realization of TRS-breaking topological physics, and it may also lead to new applications of TI-based multifunctional heterostructures.

引用

页码：4587 / 4593

页数：7

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