Charge Storage Effect on In2O3 Nanowires with Ruthenium Complex Molecules

被引：4

作者：

Choi, Insung ^{[1
,2
]}

Lee, Junghyun ^{[1
]}

Jo, Gunho ^{[3
]}

Seo, Kyoungja ^{[1
]}

Choi, Nak-Jin ^{[4
]}

Lee, Takhee ^{[3
]}

Lee, Hyoyoung ^{[1
,2
]}

机构：

[1] Elect & Telecommun Res Inst, Ctr Smart Mol Memory, Natl Creat Res Initiat, Taejon 305350, South Korea

[2] Univ Sci & Technol, Next Generat Device Engn, Taejon 305333, South Korea

[3] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[4] Elect & Telecommun Res Inst, Nano Convergence Sensor Team, Taejon 305350, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 01期

关键词：

BUILDING-BLOCKS; DEVICES; MEMORY;

D O I：

10.1143/APEX.2.015001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge storage effect on In2O3 nanowire field-effect transistors (FETs) is controlled by a chemical gate, ruthenium(II) terpyridine (Ru-II-tpy) complex molecules. In2O3 nanowire FETs functionalized with a self-assembled monolayer of the molecules exhibit large hysteretic characteristics with regard to source-drain current vs gate voltage characteristics. The devices are operated with reversible switching behavior at gate voltage cycles of writing, reading, erasing, and reading, and their retention time is in excess of 1000 s. These results reveal that the reversible chemical reaction (i.e., oxidation and reduction of the molecules) of Ru-II-tpy complexes produces a charging/discharging process of In2O3 nanowire FETs. (C) 2009 The Japan Society of Applied Physics

引用

页码：0150011 / 0150013

页数：3

共 22 条

[1] X-ray photoelectron spectroscopy sulfur 2p study of organic thiol and disulfide binding interactions with gold surfaces [J].

Castner, DG ;

Hinds, K ;

Grainger, DW .

LANGMUIR, 1996, 12 (21) :5083-5086

[2] A new strained-Si channel power MOSFET for high performance applications [J].

Cho, YK ;

Roh, TM ;

Kim, J .

ETRI JOURNAL, 2006, 28 (02) :253-256

[3] Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].

Cui, Y ;

Lieber, CM .

SCIENCE, 2001, 291 (5505) :851-853

[4] Nonvolatile memory and programmable logic from molecule-gated nanowires [J].

Duan, XF ;

Huang, Y ;

Lieber, CM .

NANO LETTERS, 2002, 2 (05) :487-490

[5] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].

Duan, XF ;

Huang, Y ;

Cui, Y ;

Wang, JF ;

Lieber, CM .

NATURE, 2001, 409 (6816) :66-69

[6] Role of molecular surface passivation in electrical transport properties of InAs nanowires [J].

Hang, Qingling ;

Wang, Fudong ;

Carpenter, Patrick D. ;

Zemlyanov, Dmitri ;

Zakharov, Dmitri ;

Stach, Eric A. ;

Buhro, William E. ;

Janes, David B. .

NANO LETTERS, 2008, 8 (01) :49-55

[7] Gallium nitride nanowire nanodevices [J].

Huang, Y ;

Duan, XF ;

Cui, Y ;

Lieber, CM .

NANO LETTERS, 2002, 2 (02) :101-104

[8] Structural and electrical characterization of intrinsic n-type In2O3 nanowires [J].

Jo, Gunho ;

Hong, Woong-Ki ;

Maeng, Jongsun ;

Kim, Tae-Wook ;

Wang, Gunuk ;

Yoon, Ahnsook ;

Kwon, Soon-Shin ;

Song, Sunghoon ;

Lee, Takhee .

COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2008, 313 (308-311) :308-311

[9] Short-channel effect and single-electron transport in individual indium oxide nanowires [J].

Jung, Minkyung ;

Lee, Hyoyoung ;

Moon, Sunkyung ;

Song, Woon ;

Kim, Nam ;

Kim, Jinhee ;

Jo, Gunho ;

Lee, Takhee .

NANOTECHNOLOGY, 2007, 18 (43)

[10] 3.5-inch QCIF AMOLED panels with ultra-low-temperature polycrystalline silicon thin film transistor on plastic substrate [J].

Kim, Yong-Hae ;

Chung, Choong-Heui ;

Moon, Jaehyun ;

Lee, Su-Jae ;

Kim, Gi Heon ;

Song, Ybon-Ho .

ETRI JOURNAL, 2008, 30 (02) :308-314

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