Robustness of two-dimensional topological insulator states in bilayer bismuth against strain and electrical field

被引：96

作者：

Chen, Li ^{[1
,2
,3
,4
]}

Wang, Z. F. ^{[2
]}

Liu, Feng ^{[2
]}

机构：

[1] Linyi Univ, Inst Condensed Matter Phys, Linyi 276005, Shandong, Peoples R China

[2] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA

[3] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China

[4] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 23期

基金：

中国国家自然科学基金;

关键词：

HGTE QUANTUM-WELLS; DYNAMICS;

D O I：

10.1103/PhysRevB.87.235420

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using first-principles and Wannier function methods, we systematically calculate the electronic band structure and topological edge states of single bilayer Bi (111) film (BL-Bi) as a function of strain and perpendicular electric field to investigate the effects induced by lattice mismatch and interfacial charge transfer when BL-Bi is epitaxially grown on a substrate. We found that the BL-Bi remains with a finite band gap and a nontrivial band topology for strains up to +/- 6% and electric fields up to 0.8 eV/angstrom. This indicates that the BL-Bi is a robust two-dimensional topological insulator against strain and electrical field on a substrate.

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页数：5

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