Fast ferroelectric domain wall motion in BiAlO3

被引：13

作者：

Son, Jong Yeog ^{[1
]}

Yoon, Sung Min ^{[2
]}

机构：

[1] Kyung Hee Univ, Coll Appl Sci, Dept Appl Phys, Suwon 446701, South Korea

[2] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Suwon 446701, South Korea

来源：

CERAMICS INTERNATIONAL | 2013年 / 39卷 / 04期

关键词：

Ferroelectric thin film; Domain wall speed; Activation energy; THIN-FILMS; GROWTH; PEROVSKITE;

D O I：

10.1016/j.ceramint.2012.10.253

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The ferroelectric domain wall motion was investigated in epitaxial PbTiO3 and BiAlO3 thin films on SrRuO3/SrTiO3 substrates. To determine the switching speeds of two ferroelectric capacitors consisting of PbTiO3 and BiAlO3 thin films, the switching currents of the two capacitors were measured as a function of time. The BiAlO3 thin film showed faster switching behavior than the PbTiO3 thin film. Data from a piezoelectric force microscope study indicated that the high domain wall motion of the BiAlO3 thin film is due to its low activation energy. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：4031 / 4034

页数：4

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