A 110-170-GHz Multi-Mode Transconductance Mixer in 250-nm InP DHBT Technology

被引：13

作者：

Yan, Yu ^{[1
]}

Bao, Mingquan ^{[2
]}

Gunnarsson, Sten E. ^{[1
,3
]}

Vassilev, Vessen ^{[1
]}

Zirath, Herbert ^{[1
,2
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci MC2, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

[2] Ericsson AB, Ericsson Res, SE-41756 Gothenburg, Sweden

[3] Sivers IMA, SE-16440 Kista, Sweden

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2015年 / 63卷 / 09期

关键词：

Conversion gain; D-band; double heterojunction bipolar transistor (DHBT); duty-cycle; indium-phosphide (InP); millimeter wave; monolithic microwave integrated circuit (MMIC); multi-mode; noise figure; 110-170; GHz; sub-harmonic mixer; transconductance mixer; 250; nm; RECEIVER; TRANSMITTER;

D O I：

10.1109/TMTT.2015.2459676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel full D-band (110-170 GHz) multi-mode transconductance down-converter mixer is realized in a 250-nm indium-phosphide double heterojunction bipolar transistor technology. A single-balanced topology is chosen and an active power combiner for the RF and the local oscillator (LO) signals' combination is used. The designed mixer is feasible to work at x 1, x 2, x 3, x 4 subharmonically LO-pumped mixing modes with relatively low LO powers of 0, -1, 5, and 6 dBm, respectively. The measured conversion gain achieves typical values of -3, -1, -5, and -4 dB over the full D-band while the best noise figures of 12, 13.5, 18.5, and 19 dB are obtained, respectively. Through the multi-mode operation in terms of subharmonic LO-pump-frequency, the designer can make a tradeoff between LO frequency, LO power, and noise figure.

引用

页码：2897 / 2904

页数：8

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