Structural and optical properties of Zn-In-Te thin films deposited by thermal evaporation technique

被引:11
作者
Gullu, H. H. [1 ]
Bayrakli, O. [1 ]
Candan, I. [1 ]
Coskun, E. [1 ,2 ]
Parlak, M. [1 ]
机构
[1] Middle E Tech Univ, Dept Phys, GUNAM, TR-06800 Ankara, Turkey
[2] Canakkale Onsekiz Mart Univ, Dept Phys, TR-17100 Canakkale, Turkey
关键词
Thin films; Optical properties; Crystal structure; Optical spectroscopy; X-ray diffraction; PHOTOCONDUCTIVITY; ABSORPTION; ZNIN2TE4; ZNIN2SE4;
D O I
10.1016/j.jallcom.2013.03.030
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Annealing effects on structural and optical properties of the thermally evaporated Zn-In-Te(ZIT) thin films have been investigated. The structural and the compositional analyses were carried out by means of X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDXA). The as-grown and annealed ZIT films had polycrystalline structure and the preferred orientation changed from (220) to (112) direction with increasing annealing temperature. The optical properties and constants were determined by transmittance measurements in the wavelength range of 200-2000 nm. The effect of annealing on the optical parameters was determined by using Single Oscillator Model (SOM), Envelope Model (EM) and Cauchy Method. The absorbance studies revealed that the films had three distinct transitions in the high absorption region because of the tetragonal distortion, and that was used to evaluate the splitting energies of crystal-field and spin-orbit splitting. The fundamental optical band gap values were found to be lying in the range of 1.51 and 1.72 eV and the notable change of the band gaps due to annealing temperatures was observed. Finally, the Urbach energies were calculated and it was observed that the band tail energies were increasing with increasing annealing temperature. (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码:83 / 89
页数:7
相关论文
共 20 条
[1]  
Adachi S., 1999, OPTICAL PROPERTIES C
[2]   Band gap engineering in polycrystalline Cu(In,Ga)(Se,S)2 chalcopyrite thin films [J].
Alberts, V .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 107 (02) :139-147
[3]   Ag doped ZnTe films prepared by closed space sublimation and an ion exchange process [J].
Aqili, Akram K. S. ;
Saleh, Ahmad J. ;
Ali, Zulfiqar ;
Al-Omari, S. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 520 :83-88
[4]   Structural and surface analysis of thin-film ZnTe formed with pulsed-laser deposition [J].
Erlacher, Artur ;
Lukaszew, Alejandra R. ;
Jaeger, Herbert ;
Ullrich, Bruno .
SURFACE SCIENCE, 2006, 600 (18) :3762-3765
[5]   Studies of key technologies for large area CdTe thin film solar cells [J].
Feng, Lianghuan ;
Wu, Lili ;
Lei, Zhi ;
Li, Wei ;
Cai, Yaping ;
Cai, Wei ;
Zhang, Jingquan ;
Luo, Qiong ;
Li, Bing ;
Zheng, Jiagui .
THIN SOLID FILMS, 2007, 515 (15) :5792-5797
[6]   p-d hybridization of the valence bands in chalcopyrite laser-deposited Cu(In, Ga) Se-2 thin films [J].
Kindyak, VV ;
Kindyak, AS ;
Gremenok, VF ;
Victorov, IA .
THIN SOLID FILMS, 1997, 293 (1-2) :75-77
[7]   SCHERRER AFTER 60 YEARS - SURVEY AND SOME NEW RESULTS IN DETERMINATION OF CRYSTALLITE SIZE [J].
LANGFORD, JI ;
WILSON, AJC .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1978, 11 (APR) :102-113
[8]   TRAP DISTRIBUTION AND PHOTOCONDUCTIVITY IN ZNIN2SE4 AND ZNIN2TE4 [J].
MANCA, P ;
RAGA, F ;
SPIGA, A .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1974, 19 (01) :15-28
[9]   PHOTOCONDUCTIVITY OF ZNIN2SE4 AND ZNIN2TE4 [J].
MANCA, P ;
RAGA, F ;
SPIGA, A .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 16 (02) :K105-K108
[10]  
Mott N., 1979, CLARENDON, P465