All-Graphene Planar Double Barrier Resonant Tunneling Diodes

被引：15

作者：

Al-Dirini, Feras ^{[1
,2
,3
]}

Hossain, Faruque M. ^{[1
,2
]}

Nirmalathas, Ampalavanapillai ^{[1
]}

Skafidas, Efstratios ^{[1
,2
]}

机构：

[1] Univ Melbourne, Dept Elect & Elect Engn, Parkville, Vic 3010, Australia

[2] Univ Melbourne, Ctr Neural Engn, Parkville, Vic 3010, Australia

[3] Natl ICT Australia, Victorian Res Lab, West Melbourne, Vic 3003, Australia

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2014年 / 2卷 / 05期

关键词：

Double barrier; extended Huckel; graphene; planar diode; resonant tunneling; rectifier; NDR; NEGF;

D O I：

10.1109/JEDS.2014.2327375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we propose an atomically-thin all-graphene planar double barrier resonant tunneling diode that can be realized within a single graphene nanoribbon. The proposed device does not require any doping or external gating and can be fabricated using minimal process steps. The planar architecture of the device allows a simple in-plane connection of multiple devices in parallel without any extra processing steps during fabrication, enhancing the current driving capabilities of the device. Quantum mechanical simulation results, based on non-equilibrium Green's function formalism and the extended Huckel method, show promising device performance with a high reverse-to-forward current rectification ratio exceeding 50 000, and confirm the presence of negative differential resistance within the device's current-voltage characteristics.

引用

页码：118 / 122

页数：5

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