共 25 条
Tunable spin-polarized source by the δ-doping in anisomerous double δ-magnetic-barrier nanostructure
被引:16
作者:

Lu, Mao-Wang
论文数: 0 引用数: 0
h-index: 0
机构:
Guilin Univ Technol, Coll Sci, Guilin 541004, Peoples R China Guilin Univ Technol, Coll Sci, Guilin 541004, Peoples R China

Wang, Zhi-Yong
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机构:
Guilin Univ Technol, Coll Sci, Guilin 541004, Peoples R China Guilin Univ Technol, Coll Sci, Guilin 541004, Peoples R China

Cao, Xue-Li
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h-index: 0
机构:
Guilin Univ Technol, Coll Sci, Guilin 541004, Peoples R China Guilin Univ Technol, Coll Sci, Guilin 541004, Peoples R China

Li, Suai
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h-index: 0
机构:
Guilin Univ Technol, Coll Sci, Guilin 541004, Peoples R China Guilin Univ Technol, Coll Sci, Guilin 541004, Peoples R China
机构:
[1] Guilin Univ Technol, Coll Sci, Guilin 541004, Peoples R China
关键词:
Magnetic nanostructure;
delta-doping;
Spin polarization;
Spin filter;
2-DIMENSIONAL ELECTRON-GAS;
TRANSPORT;
D O I:
10.1016/j.ssc.2013.04.021
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
Based on anisomerous double delta-magnetic-barrier nanostructure, an electron-spin filter can be formed [M.W. Lu, Appl. Surf. Sci. 252 (2005) 1747]. To structurally manipulate the spin polarization in spin filter, we dope a tunable delta-potential into the device by using modern material growth techniques such as molecular beam epitaxy. It is shown that the degree of electron-spin polarization depends greatly on the height and/or position of the delta-doping. Thus, the device can be used as a tunable spin-polarized source by the delta-doping. (c) 2013 Elsevier Ltd. All rights reserved.
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页码:45 / 48
页数:4
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