Electrical modeling of InSb PiN photodiode for avalanche operation

被引：34

作者：

Abautret, J. ^{[1
,2
]}

Perez, J. P. ^{[1
]}

Evirgen, A. ^{[1
,2
]}

Martinez, F. ^{[1
]}

Christol, P. ^{[1
]}

Fleury, J. ^{[3
]}

Sik, H. ^{[3
]}

Cluzel, R. ^{[2
]}

Ferron, A. ^{[4
]}

Rothman, J. ^{[4
]}

机构：

[1] UMR CNRS 5214 Univ Montpellier 2, Inst Elect Sud, F-34095 Montpellier 05, France

[2] SOFRADIR, F-38113 Veurey Voroize, France

[3] SAGEM DEF SECURITE, Etab Argenteuil, F-95101 Argenteuil, France

[4] CEA LETI, F-38054 Grenoble 9, France

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 18期

关键词：

IMPACT IONIZATION; INDIUM-ANTIMONIDE; SEMICONDUCTORS; RECOMBINATION; TEMPERATURE; SIMULATION; BREAKDOWN; NOISE;

D O I：

10.1063/1.4804956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current density-voltage (J-V) characteristics at 77 K of InSb pin photodiodes, in dark condition and under illumination, were simulated in view to design an avalanche photodiode (APD). Theoretical J-V results were compared with experimental results, performed on InSb diode fabricated by molecular beam epitaxy, in order to validate the parameter values used for the modeling. Then, with the assumption of multiplication induced by the electrons, an optimized separate absorption and multiplication APD structure was defined by theoretically studying the absorber doping level and the multiplication layer thickness. Calculated gain value higher than 10 was achieved at V = -4.5 V. This result shows the potentiality of InSb material as APD device. (C) 2013 AIP Publishing LLC.

引用

页数：7

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