Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers

被引：4

作者：

Shernyakov, Yu. M. ^{[1
]}

Maksimov, M. V. ^{[1
,2
]}

Zhukov, A. E. ^{[1
,2
]}

Savelyev, A. V. ^{[2
]}

Korenev, V. V. ^{[2
]}

Zubov, F. I. ^{[2
]}

Gordeev, N. Yu. ^{[1
,2
]}

Livshits, D. A. ^{[3
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg Acad Univ, St Petersburg 194021, Russia

[3] Innolume GmbH, D-44263 Dortmund, Germany

来源：

SEMICONDUCTORS | 2012年 / 46卷 / 10期

基金：

俄罗斯基础研究基金会;

关键词：

POWER;

D O I：

10.1134/S1063782612100132

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The lasing spectra and light-power characteristics of lasers based on InAs/InGaAs quantum dots with p-type modulation doping are studied over a broad range of pump currents. It is shown that p-type doping leads to a significant increase in the threshold current for the onset of lasing at the excited-state transition and makes it possible to attain higher output powers for lasing at the ground-state transition as compared to lasers with an undoped active region. An explanation for the observed features of two-level oscillation in quantum-dot lasers is suggested.

引用

页码：1331 / 1334

页数：4

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