E-Band RF-to-DC Converter Using Schottky Diode in 0.18-μm CMOS Technology

被引：0

作者：

Chang, Wei-Ling ^{[1
]}

Meng, Chinchun ^{[1
]}

Fu, Tzu-Chien ^{[1
]}

Huang, Guo-Wei ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Nano Device Labs, Hsinchu 300, Taiwan

来源：

2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2016年

关键词：

CMOS; Schottky-barrier diode; millimeter-wave; RF-to-DC converter; MILLIMETER-WAVE; FREQUENCY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper demonstrates a millimeter-wave RF-to-DC converter based on Schottky-barrier diodes using 0.18-mu m CMOS technology. The Schottky-barrier diode has a cutoff frequency of 400 GHz and a low turn-on voltage of 0.3 V. In the RF-to-DC quadrupler, the difference in turn-on voltages between the Schottky-barrier diode and n-well to p-substrate parasitic pn junction prevents the pn junction from turning on with an effect similar to the Schottky diode clamp in Schottky TTL circuits. The input matching has a better than 10 dB return loss from 50 GHz to 100 GHz. The RF-to-DC quadrupler generates a 3.15 V DC voltage at 84 GHz.

引用

页数：3

共 9 条

[1] A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS [J].

Han, Ruonan ;

Zhang, Yaming ;

Coquillat, Dominique ;

Videlier, Hadley ;

Knap, Wojciech ;

Brown, Elliott ;

Kenneth, K. O. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2011, 46 (11) :2602-2612

[2] Technique for Integration of a Wireless Switch in a 2.4 GHz Single Chip Radio [J].

Lerdsitsomboon, Wuttichai ;

Kenneth, K. O. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2011, 46 (02) :368-377

[3] 125-GHz Diode Frequency Doubler in 0.13-μm CMOS [J].

Mao, Chuying ;

Nallani, Chakravartula Shashank ;

Sankaran, Swaminathan ;

Seok, Eunyoung ;

O, Kenneth K. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (05) :1531-1538

[4] Schottky barrier diode circuits in silicon for future millimeter-wave and terahertz applications [J].

Pfeiffer, Ullrich R. ;

Mishra, Chinmaya ;

Rassel, Robert M. ;

Pinkett, Shawn ;

Reynolds, Scott K. .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2008, 56 (02) :364-371

[5] Schottky barrier diodes for millimeter wave detection in a foundry CMOS process [J].

Sankaran, S ;

O, KK .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (07) :492-494

[6] Schottky diode with cutoff frequency of 400 GHz fabricated in 0.18 μm CMOS [J].

Sankaran, S ;

O, KK .

ELECTRONICS LETTERS, 2005, 41 (08) :506-508

[7]

Sedra, MICROELECTRONICS CIR

[8] 150 GHz Complementary Anti-Parallel Diode Frequency Tripler in 130 nm CMOS [J].

Shim, Dongha ;

Mao, Chuying ;

Sankaran, Swaminathan ;

Kenneth, K. O. .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2011, 21 (01) :43-45

[9] 60-GHz Dual-Conversion Down-/Up-Converters Using Schottky Diode in 0.18 μm Foundry CMOS Technology [J].

Wei, Hung-Ju ;

Meng, Chinchun ;

Wang, Ta-Wei ;

Lo, Tai-Lin ;

Wang, Chia-Ling .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (06) :1684-1698

← 1 →