Temperature dependence of spin lifetime of conduction electrons in bulk germanium

被引：36

作者：

Guite, Chinkhanlun ^{[1
]}

Venkataraman, V. ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 25期

关键词：

SEMICONDUCTORS; MOBILITY;

D O I：

10.1063/1.4772500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optically generated spin polarized electrons in bulk n-type Ge samples have been detected by using a radio-frequency modulation technique. Using the Hanle effect in an external magnetic field, the spin lifetime was measured as a function of temperature in the range 90 K to 180 K. The lifetime decreases with increasing temperature from similar to 5 ns at 100 K to similar to 2 ns at 180 K. We show that the temperature dependence is consistent with the Elliott-Yafet spin relaxation mechanism [R. J. Elliot, Phys. Rev. 96, 266 (1954)]. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772500]

引用

页数：3

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