A 6-32 GHz T/R switch in 0.18-μm CMOS technology

被引:5
|
作者
Wang, Sen [1 ]
Li, Zi-Kang [1 ]
机构
[1] Natl Taipei Univ Technol, Dept Elect Engn, Taipei 10608, Taiwan
来源
IEICE ELECTRONICS EXPRESS | 2012年 / 9卷 / 06期
关键词
T/R switch; CMOS; single-pole double-throw switch; BAND;
D O I
10.1587/elex.9.590
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a broadband single-pole double-throw (SPDT) transmit/receive (T/R) switch implemented in a standard 0.18-mu m CMOS technology. The switch uses a grounded inductor, transistors in deep n-type wells, resistive body-floating components, a negative control voltage, and lowpass networks to improve its insertion losses, power-handling capabilities, and isolation. Moreover, the switch featuring a bandpass response results from the grounded inductor and the lowpass networks. To select T/R modes, the control voltage is under +/- 1.8-V operation. The insertion loss, input return loss, return loss, and isolation of the switch are 2.7 +/- 0.4dB, > 14.3dB, > 10.2dB, and > 32.8 dB from 6 GHz to 32 GHz, respectively. The input P(1)dB is 22.6 +/- 1.6 dBm at the frequencies of interest.
引用
收藏
页码:590 / 595
页数:6
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