Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

被引：49

作者：

Craig, A. P. ^{[1
]}

Jain, M. ^{[2
]}

Wicks, G. ^{[3
]}

Golding, T. ^{[2
,3
]}

Hossain, K. ^{[3
]}

McEwan, K. ^{[4
]}

Howle, C. ^{[4
]}

Percy, B. ^{[1
]}

Marshall, A. R. J. ^{[1
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] Amethyst Res Ltd, Glasgow G20 0SP, Lanark, Scotland

[3] Amethyst Res Inc, Ardmore, OK 73401 USA

[4] Def Sci & Technol Lab, Salisbury SP4 0JQ, Wilts, England

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 20期

基金：

英国工程与自然科学研究理事会;

关键词：

ALLOYS;

D O I：

10.1063/1.4921468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In0.28Ga0.72As0.25Sb0.75 allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 mu m at 250K and 3.0 mu m at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7 x 10(10) Jones and 1 x 10(10) Jones were calculated, for 240K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

引用

页数：4

共 15 条

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