Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis

被引：38

作者：

Asmussen, J. ^{[1
]}

Grotjohn, T. A.

Schuelke, T. ^{[1
]}

Becker, M. F. ^{[1
]}

Yaran, M. K. ^{[1
]}

King, D. J. ^{[1
]}

Wicklein, S. ^{[1
]}

Reinhard, D. K.

机构：

[1] Michigan State Univ, Ctr Coatings & Laser Applicat, Fraunhofer USA Inc, E Lansing, MI 48824 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 03期

关键词：

D O I：

10.1063/1.2961016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A multiple substrate, microwave plasma-assisted chemical vapor deposition synthesis process for single crystal diamond (SCD) is demonstrated using a 915 MHz reactor. Diamond synthesis was performed using input chemistries of 6-8% of CH(4)/H(2), microwave input powers of 10-11.5 kW, substrate temperatures of 1100-1200 degrees C, and pressures of 110-135 Torr. The simultaneous synthesis of SCD over 70 diamond seeds yielded good quality SCD with deposition rates of 14-21 mu m/h. Multiple deposition runs totaling 145 h of deposition time added 1.8-2.5 mm of diamond material to each of the 70 seed crystals. (C) 2008 American Institute of Physics.

引用

页数：3

共 13 条

[1]

Hemley R. J., 2005, U.S. Patent, Patent No. [6,858,078, 6858078]

[2] Scaling the microwave plasma-assisted chemical vapor diamond deposition process to 150-200 mm substrates [J].