Self-aligned top-gate InGaZnO thin film transistors using SiO2/Al2O3 stack gate dielectric

被引：15

作者：

Chen, Rongsheng ^{[1
]}

Zhou, Wei ^{[1
]}

Zhang, Meng ^{[1
]}

Wong, Man ^{[1
]}

Kwok, Hoi Sing ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Ctr Display Res, Kowloon, Hong Kong, Peoples R China

来源：

THIN SOLID FILMS | 2013年 / 548卷

关键词：

Aluminum oxide; Amorphous indium-gallium-zinc oxide; Thin film transistors; Self-aligned structure;

D O I：

10.1016/j.tsf.2013.09.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) utilizing SiO2/Al2O3 stack thin films as gate dielectric are developed in this paper. Due to high quality of the high-k Al2O3 and good interface between active layer and gate dielectric, the resulting a-IGZO TFT exhibits good electrical performance including field-effect mobility of 9 cm(2)/Vs, threshold voltage of 2.2 V, subthreshold swing of 0.2 V/decade, and on/off current ratio of 1 x 10(7). With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. (C) 2013 Elsevier B. V. All rights reserved.

引用

收藏

页码：572 / 575

页数：4

相关论文

共 13 条

[1] Charge carrier induced lattice strain and stress effects on As activation in Si [J].

Ahn, Chihak ;

Dunham, Scott T. .

APPLIED PHYSICS LETTERS, 2008, 93 (02)

[2] Influence of contact effect on the performance of microcrystalline silicon thin-film transistors [J].

Chan, Kah-Yoong ;

Bunte, Eerke ;

Stiebig, Helmut ;

Knipp, Dietmar .

APPLIED PHYSICS LETTERS, 2006, 89 (20)

[3] Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Martins, RFP ;

Pereira, LMN .

APPLIED PHYSICS LETTERS, 2004, 85 (13) :2541-2543

[4] Self-Aligned Coplanar a-IGZO TFTs and Application to High-Speed Circuits [J].

Kang, Dong Han ;

Kang, In ;

Ryu, Sang Hyun ;

Jang, Jin .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (10) :1385-1387

[5] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[6] Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition [J].

Kim, J. B. ;

Fuentes-Hernandez, C. ;

Potscavage, W. J., Jr. ;

Zhang, X. -H. ;

Kippelen, B. .

APPLIED PHYSICS LETTERS, 2009, 94 (14)

[7] Characteristics of transparent ZnO based thin film transistors with amorphous HfO2 gate insulators and Ga doped ZnO electrodes [J].

Kim, Jong Hoon ;

Du Ahn, Byung ;

Lee, Choong Hee ;

Jeon, Kyung Ah ;

Kang, Hong Seong ;

Lee, Sang Yeol .

THIN SOLID FILMS, 2008, 516 (07) :1529-1532

[8] High-Performance Indium-Gallium-Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide [J].

Lan, Linfeng ;

Peng, Junbiao .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (05) :1452-1455

[9] Influence of Channel Stoichiometry on Zinc Indium Oxide Thin-Film Transistor Performance [J].

McDowell, Matthew G. ;

Hill, Ian G. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (02) :343-347

[10] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].

Nomura, K ;

Ohta, H ;

Takagi, A ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

NATURE, 2004, 432 (7016) :488-492