Spin-polarized transport across sharp antiferromagnetic boundaries

被引：267

作者：

Eerenstein, W ^{[1
]}

Palstra, TTM ^{[1
]}

Saxena, SS ^{[1
]}

Hibma, T ^{[1
]}

机构：

[1] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.88.247204

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report spin-polarized transport experiments across antiphase domain boundaries which act as atomically sharp magnetic interfaces. The antiphase boundaries are prepared by growing Fe3O4 epitaxially on MgO, the magnetic coupling over a large fraction of these boundaries being antiferromagnetic. Magnetoresistance measurements yield linear and quadratic field dependence up to the anisotropy field for fields applied parallel and perpendicular to the film plane, respectively. This behavior can be explained by a hopping model in which spin-polarized electrons traverse an antiferromagnetic interface between two ferromagnetic chains.

引用

页码：4 / 247204

页数：4

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